Hybrid silicon evanescent laser fabricated with a silicon waveguide and III-V offset quantum wells.
نویسندگان
چکیده
A novel laser that utilizes a silicon waveguide bonded to AlGaInAs quantum wells is demonstrated. This wafer scale fabrication approach allows the optical waveguide to be defined by CMOS-compatible silicon processing while optical gain is provided by III-V materials. The AlGaInAs quantum well structure is bonded to the silicon wafer using low temperature oxygen plasma-assisted wafer bonding. The optically pumped 1538 nm laser has a pulsed threshold of 30 mW and an output power of 1.4 mW.
منابع مشابه
Design of Hybrid Silicon Evanescent Amplifiers
The structure and design of a hybrid silicon evanescent amplifier, incorporating III-V offset quantum wells bonded on a silicon waveguide, is proposed and discussed.
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عنوان ژورنال:
- Optics express
دوره 13 23 شماره
صفحات -
تاریخ انتشار 2005